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We have shown that it is possible to construct low-noise single-electron
transistors (SETs) using free-standing multiwalled carbon nanotubes. The
$1/f^\alpha$-noise of our devices, 6$% \cdot 10^{-6}$ e/$\sqrt{Hz}$ at 45
Hz, is close in the performance to the best metallic SETs of today.
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AFM picture of the free-standing MWNT device, on which the record charge
sensitivity was measured. The cross-sectional view is shown below; the
dimensions are in nanometers.
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