A SET device made using two crossing arc-discharge-grown MWNTs. The charge
sensitivity of this device was measured to be
6´10-4
e/ÖHz.
Sequence of AFM pictures taken during the manufacturing of the nanotube
cross.
|
Current of the nanotube-SET as a function of the gate voltage Vg and the
bias voltage Ub. The Coulomb blockade is clearly seen in the rhombic regions
in the center. |
